Silicon carbide (SiC) and gallium nitride (GaN) are wide bandgap (WBG) technologies that offer unique advantages over legacy silicon (Si) semiconductors. SiC has a bandgap of 3.4 eV and excels in applications where heat dissipation is crucial, such as electric vehicle (EV) charging and energy management infrastructure. On the other hand, GaN has a bandgap of 3.2 eV and is known for its fast switching capabilities and high power density at the board level. The choice between SiC and GaN depends on the specific power, thermal, and size requirements of the application. In some cases, a combination of SiC and GaN, along with legacy Si, may be the best solution. Infineon Technologies offers a wide range of WBG technologies and can help customers choose the optimal solution for their specific needs.
